Ivan Shchemerov

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Measurement of inclusive production of charmonium states in $b$-hadron decays via their decay into $ϕϕ$2026
• Observation and investigation of the tcc1(4430)+ structure in B+ →ψ(2S)KS0π+ decays2026
• Measurement of CP asymmetries in $$ {\overline{B}}^0\to {D}_s^{-}{D}^{+} $$ and $$ {\overline{B}}_s^0\to {D}_s^{-}{D}^{-} $$ decays2026
• The LHCb Upgrade I2024
• Observation of a J / ψ Λ Resonance Consistent with a Strange Pentaquark Candidate in B − → J / ψ Λ p ¯ Decays2023
• Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage2018 · аннотациясвернуть

  Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with…

• Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si2018 · аннотациясвернуть

  Hole traps in hydride vapor phase epitaxy β-Ga2O3 films were studied by deep level transient spectroscopy with electrical and optical excitation (DLTS and ODLTS) and by photocapacitance and temperature dependence…

• Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)2018 · аннотациясвернуть

  The Fermi level in bulk semi-insulating β-Ga2O3 doped with Fe (∼5 × 1018 cm−3) is found to be pinned near Ec − 0.85 eV. At temperatures ≥400 K, Ni Schottky diodes showed good rectification and measurable low frequency…