Mamed R. Ismail-zade

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• SPICE Modeling of GaN HEMTs in the Wide Temperature Range $(-269^{\circ}\mathrm{C}\ldots+500^{\circ}\mathrm{C})$2025
• Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node2024
• Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells2022 · аннотациясвернуть

  Comparative modeling of induced charge in FinFET and MOSFET structures is performed. A comparative analysis of the influence of various mechanisms on the occurrence of a current pulse after a particle strike is carried…

• Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)2022
• JFET and MOSFET SPICE Models in a Wide Temperature Range2021
• INVESTIGATION OF THE POSSIBILITIES OF USING VARIOUS INDUSTRIAL EXTRACTORS TO DETERMINE THE SPICE MODEL PARAMETERS OF SUBMICRON MOSFETS IN THE TEMPERATURE RANGE UP TO +300°C2021
• SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)2020 · аннотациясвернуть

  The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level ( -60°C⋯+150°C) to harsh conditions level ( -200°C⋯+300°C) for low/high-temperature ICs…

• Automation of parameter extraction procedure for Si JFET SPICE model in the −200…+110°C temperature range2018 · аннотациясвернуть

  Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature range. Parameter…