С. В. Черных

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Electron Beam Induced Current Studies of Defects Generated by Soft Breakdown of Ga 2 O 3 Schottky Diodes2026
• Trap States in HfO 2 /Ga 2 O 3 and Al 2 O 3 /Ga 2 O 3 Metal Insulator Semiconductor Structures2025
• Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe)2025
• Deep traps in Ga 2 O 3 Schottky diodes induced by soft electric breakdown2025
• Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals2024
• High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors2020
• Defect States Determining Dynamic Trapping-Detrapping in β-Ga 2 O 3 Field-Effect Transistors2019 · аннотациясвернуть

  β-Ga 2 O 3 is an intriguing material as a channel layer for the next generation high power transistors. To assess the device level effects of the traps in β-Ga 2 O 3 , the dynamic dispersion characteristics of a…

• Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes2019 · аннотациясвернуть

  Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined.…