V. A. Golyashov

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Band structure of Na 2 KSb : Near-band-gap photoemission spectroscopy and density functional theory calculations2026
• Intrinsic negative magnetoresistance in layered antiferromagnetic semimetals: The case of EuSn 2 As 22026
• Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes2026
• Revealing the (111) surface electronic structure of epitaxially grown Na2KSb photocathode2026
• Impact of oxygen-related defects in a thin AlN layer on the two-dimensional electron gas in an AlN/GaN heterostructure2025
• New Spin-Polarized Electron Source Based on Alkali Antimonide Photocathode2022
• Experimental Realization of a Topological p–n Junction by Intrinsic Defect Grading2016 · аннотациясвернуть

  A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p- and n-doped, respectively;…

• Melt growth of bulk Bi 2 Te 3 crystals with a natural p–n junction2013 · аннотациясвернуть

  Single crystals of Bi2Te3 were grown from Bi–Te melts using the modified Bridgman method. It was shown for the first time that solidification of 61 and 62 mol.% Te melts provides a built-in p–n junction on the cleaved…