Lev M. Sambursky

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• SPICE Modeling of GaN HEMTs in the Wide Temperature Range $(-269^{\circ}\mathrm{C}\ldots+500^{\circ}\mathrm{C})$2025
• Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)2022
• SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)2020 · аннотациясвернуть

  The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level ( -60°C⋯+150°C) to harsh conditions level ( -200°C⋯+300°C) for low/high-temperature ICs…

• Compact Si JFET model for cryogenic temperature2020
• TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures2020
• Early Study of Transistor and Circuit Parameter Variation for 180 nm High-Temperature SOI CMOS Production Technology2020
• Automation of parameter extraction procedure for Si JFET SPICE model in the −200…+110°C temperature range2018 · аннотациясвернуть

  Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature range. Parameter…

• Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)2017