Maxim G. Kozodaev
МФТИ
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- 2D Materials and Applications
- Advanced Memory and Neural Computing
Чем занимается
Ключевые темы по публикациям: Ferroelectric and Negative Capacitance Devices; Semiconductor materials and devices; MXene and MAX Phase Materials; 2D Materials and Applications; Advanced Memory and Neural Computing.
Последние работы
Все 50 в OpenAlexImproved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films2017 · аннотациясвернуть
Hf 0.5 Zr 0.5 O 2 thin films are one of the most appealing HfO 2 -based ferroelectric thin films, which have been researched extensively for their applications in ferroelectric memory devices. In this work, a 1 mol %…
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si2016 · аннотациясвернуть
Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related…
Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping2019 · аннотациясвернуть
The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol.…
Ferroelectric Second-Order Memristor2019 · аннотациясвернуть
While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result,…
- Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks2016
- Phase coexistence in Y - and La -doped Hf 0.5 Zr 0.5 O 2 thin films and its effect on the electrical properties in functional capacitors2026
- Thickness-dependent retention–endurance trade-off in scaled Hf0.5Zr0.5O2 ferroelectric capacitor2025
- Thickness scaling of ferroelectric Hf0.5Zr0.5O2 films: How microstructural evolution drives leakage current amplification2025
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Шаблон письма
Здравствуйте, Maxim G. Kozodaev! Я студент(ка) [курс, факультет, вуз]. Мне интересна тема [опишите интересы своими словами]. Прочитал(а) вашу работу «Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films» (2017) — она близка к тому, чем я хочу заниматься. Хочу обсудить возможность выполнить научную работу под вашим руководством. Буду благодарен(на) за ответ — готов(а) рассказать о себе подробнее и прислать резюме. С уважением, [Имя Фамилия]
На этапе теста письмо отправляешь сам из своей почты. Отправка из сервиса и статусы заявок — скоро.