Konstantin O. Petrosyants

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• TCAD-SPICE Analysis of SEU and Reliability in Space-Grade SRAM from 90 nm to 28 nm2025
• SPICE Modeling of GaN HEMTs in the Wide Temperature Range $(-269^{\circ}\mathrm{C}\ldots+500^{\circ}\mathrm{C})$2025
• Hardware–Software Complex for SPICE Model Libraries Development2025
• Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node2024
• Quasi-3D Numerical Thermal Modelling of Electronic Systems in Package2024
• Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling2022 · аннотациясвернуть

  A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The…

• Automation of parameter extraction procedure for Si JFET SPICE model in the −200…+110°C temperature range2018 · аннотациясвернуть

  Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature range. Parameter…

• Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)2017