Igor Krylov

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Waveguide regimes in a pair of optically coupled non-Hermitian subwavelength structures2024
• Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers2021 · аннотациясвернуть

  We report the observation of ferroelectricity in hafnium-zirconium-oxide thin films in the as-deposited state, namely, after deposition at a low temperature of 300 °C without post-metallization annealing. The…

• Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition2020
• Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study2020
• Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition2020
• Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect2020
• The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks2015 · аннотациясвернуть

  Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder…

• Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors2013