Igor Krylov
Санкт-Петербургский государственный университет
- Semiconductor materials and devices
- Physics of Superconductivity and Magnetism
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
Чем занимается
Ключевые темы по публикациям: Semiconductor materials and devices; Physics of Superconductivity and Magnetism; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and interfaces; Integrated Circuits and Semiconductor Failure Analysis.
Последние работы
Все 67 в OpenAlexFerroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers2021 · аннотациясвернуть
We report the observation of ferroelectricity in hafnium-zirconium-oxide thin films in the as-deposited state, namely, after deposition at a low temperature of 300 °C without post-metallization annealing. The…
Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces2012 · аннотациясвернуть
Temperature dependent capacitance–voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (EA) for weak inversion C-V humps and parallel conductance peaks in Al2O3/InGaAs…
The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks2015 · аннотациясвернуть
Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder…
- Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors2013
- Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface2012
- Waveguide regimes in a pair of optically coupled non-Hermitian subwavelength structures2024
- Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition2020
- Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study2020
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Здравствуйте, Igor Krylov! Я студент(ка) [курс, факультет, вуз]. Мне интересна тема [опишите интересы своими словами]. Прочитал(а) вашу работу «Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers» (2021) — она близка к тому, чем я хочу заниматься. Хочу обсудить возможность выполнить научную работу под вашим руководством. Буду благодарен(на) за ответ — готов(а) рассказать о себе подробнее и прислать резюме. С уважением, [Имя Фамилия]
На этапе теста письмо отправляешь сам из своей почты. Отправка из сервиса и статусы заявок — скоро.