I. V. Ilkiv

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements2025
• MBE growth and properties of branched AlGaAs nanowires on silicon2025
• Influence of capping-layer growth mode on the photoluminescence of InAs quantum dots in silicon2025
• Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates2025
• MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions2025
• Matched characterization of super-multiperiod superlattices2020 · аннотациясвернуть

  Abstract Heterostructures with multiple strongly coupled quantum wells, such as super-multiperiod (SMP) superlattices (SLs), are promising semiconductor devices, which may contain hundreds or even thousands of layers…

• Thermal decomposition of GaAs nanowires2019 · аннотациясвернуть

  The realization of GaAs nanowire (NW) high-performance quantum devices operated at room temperatures requires that their diameters have to be less than 10 nm. It is shown, that the GaAs NWs with sub 10 nanometers…

• Control of Conductivity of InxGa1–xAs Nanowires by Applied Tension and Surface States2019 · аннотациясвернуть

  The electronic properties of semiconductor AIIIBV nanowires (NWs) due to their high surface/volume ratio can be effectively controlled by NW strain and surface electronic states. We study the effect of applied tension…