Аnna G. Chernikova

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Phase coexistence in Y - and La -doped Hf 0.5 Zr 0.5 O 2 thin films and its effect on the electrical properties in functional capacitors2026
• On La-doped HZO as a high-k dielectric for DRAM: Low EOT and approaches for its improvement2025
• Potential of Interval Training Protocol on a Short-Arm Human Centrifuge for Orthostatic Intolerance Prevention After Space Flight Conditions2025
• Potential of interval training protocol on a short-arm human centrifuge for orthostatic intolerance prevention after space flight conditions2025
• Structural Evolution of Nanoscale Ferroelectric Hf0.5Zr0.5O2 Layers as a Result of Their Cyclic Electrical Stimulation2025
• Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping2019 · аннотациясвернуть

  The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol.…

• Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films2018
• Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films2017 · аннотациясвернуть

  Hf 0.5 Zr 0.5 O 2 thin films are one of the most appealing HfO 2 -based ferroelectric thin films, which have been researched extensively for their applications in ferroelectric memory devices. In this work, a 1 mol %…