M. S. Sobolev

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Influence of high-energy helium ions on the characteristics of GaN epilayers with different n-type doping levels, grown on GaN-MOCVD/c-Al2O3 templates by PA MBE2025
• Corrigendum to “The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant” [Appl. Surf. Sci. 689 (2025) 162571]2025
• The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant2025
• Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients2025
• Detailed varied-parameter characterization of the GaAs/AlxGa1–xAs super-multiperiod superlattices by photoreflectance spectroscopy2024
• Matched characterization of super-multiperiod superlattices2020
• GaNP-based photovoltaic device integrated on Si substrate2019
• Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)2019 · аннотациясвернуть

  III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the…