G. É. Cirlin

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Designing the orientation of GaN nanowires on Si(100) through pore geometry engineering2026
• Topographically-guided van der Waals epitaxy: Selective growth of AlN nanowalls on h-BN step edges2025
• GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements2025
• Tunable photoresponse in GaN-based UV photodetectors via synergetic use of colloidal plasmonic nanowires and nanoparticles2025
• MBE growth and properties of branched AlGaAs nanowires on silicon2025
• Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy2010 · аннотациясвернуть

  We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the…

• Semiconductor nanowhiskers: Synthesis, properties, and applications2009 · аннотациясвернуть

  Recent results of studying the semiconductor’s whisker nanocrystals are reviewed. Physical grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are given and the main epitaxial technologies…

• Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires2009