V. V. Andryushkin

Часть публикаций из профиля, по году от новых к старым. Это не полный список последних работ автора; работы без года — в конце.

• Maximum wall-plug efficiency of 1300-nm single-frequency vertical-cavity surface-emitting lasers2025
• Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate2025
• High-speed MBE-grown 1550 nm wafer-fused VCSELs2024
• Photoluminescence of dense arrays of InGaPAs/InGaAs quantum dots formed by substitution of group V elements2024
• Gain characteristics of In0.60Ga0.40As/In0.53Al0.20Ga0.27As superlattice active regions for vertical-cavity surface-emitting lasers2024
• Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems2023 · аннотациясвернуть

  High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were…

• High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance2022 · аннотациясвернуть

  High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector…

• 20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region2022 · аннотациясвернуть

  1300-nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated by wafer fusion (WF) technique and studied. The active region based on InGaAs/InAlGaAs superlattice was grown by molecular-beam epitaxy (MBE).…